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M
Features
* Linear Charge Management Controller for Single Lithium-Ion Cells * High Accuracy Preset Voltage Regulation: +1% (max) * Two Preset Voltage Regulation Options: - 4.1V - MCP73826-4.1 - 4.2V - MCP73826-4.2 * Programmable Charge Current * Automatic Cell Preconditioning of Deeply Depleted Cells, Minimizing Heat Dissipation During Initial Charge Cycle * Automatic Power-Down when Input Power Removed * Temperature Range: -20C to +85C * Packaging: 6-Pin SOT-23A
MCP73826
Description
The MCP73826 is a linear charge management controller for use in space-limited, cost sensitive applications. The MCP73826 combines high accuracy constant voltage, controlled current regulation, and cell preconditioning in a space saving 6-pin SOT-23A package. The MCP73826 provides a stand-alone charge management solution. The MCP73826 charges the battery in three phases: preconditioning, controlled current, and constant voltage. If the battery voltage is below the internal low-voltage threshold, the battery is preconditioned with a foldback current. The preconditioning phase protects the lithium-ion cell and minimizes heat dissipation. Following the preconditioning phase, the MCP73826 enters the controlled current phase. The MCP73826 allows for design flexibility with a programmable charge current set by an external sense resistor. The charge current is ramped up, based on the cell voltage, from the foldback current to the peak charge current established by the sense resistor. This phase is maintained until the battery reaches the charge-regulation voltage. Then, the MCP73826 enters the final phase, constant voltage. The accuracy of the voltage regulation is better than 1% over the entire operating temperature range and supply voltage range. The MCP73826-4.1 is preset to a regulation voltage of 4.1V, while the MCP738264.2 is preset to 4.2V. The MCP73826 operates with an input voltage range from 4.5V to 5.5V. The MCP73826 is fully specified over the ambient temperature range of -20C to +85C.
+ Single Lithium-Ion - Cell
Single Cell Lithium-Ion Charge Management Controller
Applications
* * * * * * Single Cell Lithium-Ion Battery Chargers Personal Data Assistants Cellular Telephones Hand Held Instruments Cradle Chargers Digital Cameras
Typical Application Circuit
500 mA Lithium-Ion Battery Charger MA2Q705 VIN 5V 10 F 5 100 k 1 100 m NDS8434
6 VSNS VIN SHDN
4 VDRV VBAT 3 GND 2
Package Type
6-Pin SOT-23A
10 F
MCP73826
SHDN 1 GND 2 VBAT 3 MCP73826
6 VSNS 5 VIN 4 VDRV
2002 Microchip Technology Inc.
DS21705A-page 1
12 k VREF 500 k CHARGE CURRENT CONTROL AMPLIFIER VREF (1.2V) SHUTDOWN, REFERENCE GENERATOR VIN VOLTAGE CONTROL AMPLIFIER -
SHDN
VREF
112.5 k + - 0.3V CLAMP 75 k GND CHARGE CURRENT FOLDBACK AMPLIFIER
37.5 k
NOTE 1: Value = 340.5K for MCP73826-4.1
2002 Microchip Technology Inc.
Value = 352.5K for MCP73826-4.2
+
DS21705A-page 2 VIN - + CHARGE CURRENT AMPLIFIER + - VBAT 352.5 k (NOTE 1) 75 k VDRV
VIN
1.1 k
MCP73826
Functional Block Diagram
VSNS
MCP73826
1.0
1.1
ELECTRICAL CHARACTERISTICS
Maximum Ratings*
PIN FUNCTION TABLE
Pin Name Description
1 2 3 4 5 6
SHDN GND
VBAT
Logic Shutdown Battery Management 0V Reference Cell Voltage Monitor Input Drive Output Battery Management Input Supply Charge Current Sense Input
VIN ................................................................................... -0.3V to 6.0V
All inputs and outputs w.r.t. GND ................-0.3 to (VIN+0.3)V Current at VDRV .......................................................... +/-1 mA Maximum Junction Temperature, TJ.............................. 150C Storage temperature .....................................-65C to +150C ESD protection on all pins .................................................. 4 kV
*Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
VDRV VIN VSNS
DC CHARACTERISTICS: MCP73826-4.1, MCP73826-4.2
Unless otherwise specified, all limits apply for V IN = [VREG(typ)+1V], RSENSE = 500 m, TA = -20C to +85C. Typical values are at +25C. Refer to Figure 1-1 for test circuit. Parameter Supply Voltage Supply Current Voltage Regulation (Constant Voltage Mode) Regulated Output Voltage Line Regulation Load Regulation Output Reverse Leakage Current External MOSFET Gate Drive Gate Drive Current Gate Drive Minimum Voltage Current Regulation (Controlled Current Mode) Current Sense Gain Current Limit Threshold Foldback Current Scale Factor Shutdown Input - SHDN Input High Voltage Level Input Low Voltage Level Input Leakage Current VIH VIL ILK 40 -- -- -- -- -- -- 25 1 %VIN %VIN A VSHDN = 0V to 5.5V ACS VCS K -- 40 -- 100 53 0.43 -- 75 -- dB mV A/A (VSNS-VDRV) / VBAT (VIN-V SNS) at IOUT IDRV VDRV -- 0.08 -- -- -- 1.6 1 -- -- mA mA V Sink, CV Mode Source, CV Mode V REG VBAT VBAT ILK 4.059 4.158 -10 -1 -- 4.1 4.2 -- +0.2 8 4.141 4.242 10 1 -- V V mV mV A MCP73826-4.1 only MCP73826-4.2 only VIN = 4.5V to 5.5V, IOUT = 75 mA IOUT = 10 mA to 75 mA VIN=Floating, VBAT =VREG Sym VIN IIN Min 4.5 -- -- Typ Max 5.5 15 560 Units V A Shutdown, VSHDN = 0V Constant Voltage Mode Conditions
--
0.5 260
TEMPERATURE SPECIFICATIONS
Unless otherwise specified, all limits apply for V IN = 4.5V-5.5V Parameters Sym TA TA TA Min -20 -40 -65 Typ -- -- -- Max +85 +125 +150 Units C C C 4-Layer JC51-7 Standard Board, Natural Convection Conditions
Temperature Ranges
Specified Temperature Range Operating Temperature Range Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 6-Pin SOT-23A JA -- 230 -- C/W
2002 Microchip Technology Inc.
DS21705A-page 3
MCP73826
VIN = 5.1V (MCP73826-4.1) VIN = 5.2V (MCP73826-4.2) 22 F RSENSE NDS8434 IOUT
6 VSNS 5 100 k 1 VIN SHDN
4 VDRV VBAT GND 3 2 22 F
VOUT
MCP73826 FIGURE 1-1: MCP73826 Test Circuit.
DS21705A-page 4
2002 Microchip Technology Inc.
MCP73826
2.0
Note:
TYPICAL PERFORMANCE CHARACTERISTICS
The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, IOUT = 10 mA, Constant Voltage Mode, TA = 25C. Refer to Figure 1-1 for test circuit.
FIGURE 2-1: Output Voltage vs. Output Current (MCP73826-4.2).
FIGURE 2-4:
Supply Current vs. Output Current.
FIGURE 2-2: Output Voltage vs. Input Voltage (MCP73826-4.2).
FIGURE 2-5:
Supply Current vs. Input Voltage.
FIGURE 2-3: Output Voltage vs. Input Voltage (MCP73826-4.2).
FIGURE 2-6:
Supply Current vs. Input Voltage.
2002 Microchip Technology Inc.
DS21705A-page 5
MCP73826
Note: Unless otherwise indicated, IOUT = 10 mA, Constant Voltage Mode, TA = 25C. Refer to Figure 1-1 for test circuit.
FIGURE 2-7: Output Reverse Leakage Current vs. Output Voltage.
FIGURE 2-10: Supply Current vs. Temperature.
FIGURE 2-8: Output Reverse Leakage Current vs. Output Voltage.
FIGURE 2-11: Output (MCP73826-4.2).
Voltage
vs.
Temperature
FIGURE 2-9:
Current Limit Foldback.
FIGURE 2-12: Power-Up / Power-Down.
DS21705A-page 6
2002 Microchip Technology Inc.
MCP73826
Note: Unless otherwise indicated, IOUT = 10 mA, Constant Voltage Mode, TA = 25C. Refer to Figure 1-1 for test circuit.
FIGURE 2-13: Line Transient Response.
FIGURE 2-15: Load Transient Response.
FIGURE 2-14: Line Transient Response.
FIGURE 2-16: Load Transient Response.
2002 Microchip Technology Inc.
DS21705A-page 7
MCP73826
3.0
Pin
PIN DESCRIPTION
Name Description
3.4
Drive Output (VDRV)
The descriptions of the pins are listed in Table 3-1.
Direct output drive of an external P-channel MOSFET pass transistor for current and voltage regulation.
1 2 3 4 5 6
SHDN GND
VBAT
Logic Shutdown Battery Management 0V Reference Cell Voltage Monitor Input Drive Output Battery Management Input Supply Charge Current Sense Input
3.5
Battery Management Input Supply (VIN)
A supply voltage of 4.5V to 5.5V is recommended. Bypass to GND with a minimum of 10 F.
VDRV VIN VSNS
3.6
Charge Current Sense Input (VSNS)
TABLE 3-1:
Pin Function Table.
3.1
Logic Shutdown (SHDN)
Charge current is sensed via the voltage developed across an external precision sense resistor. The sense resistor must be placed between the supply voltage (VIN) and the source of the external pass transistor. A 50 m sense resistor produces a fast charge current of 1 A, typically.
Input to force charge termination, initiate charge, or initiate recharge.
3.2
Battery Management 0V Reference (GND)
Connect to negative terminal of battery.
3.3
Cell Voltage Monitor Input (VBAT)
Voltage sense input. Connect to positive terminal of battery. Bypass to GND with a minimum of 10 F to ensure loop stability when the battery is disconnected. A precision internal resistor divider regulates the final voltage on this pin to VREG.
DS21705A-page 8
2002 Microchip Technology Inc.
MCP73826
4.0 DEVICE OVERVIEW
4.3 Constant Voltage Regulation
The MCP73826 is a linear charge management controller. Refer to the functional block diagram on page 2 and the typical application circuit, Figure 6-1. When the cell voltage reaches the regulation voltage, VREG, constant voltage regulation begins. The MCP73826 monitors the cell voltage at the VBAT pin. This input is tied directly to the positive terminal of the battery. The MCP73826 is offered in two fixed-voltage versions for battery packs with either coke or graphite anodes: 4.1V (MCP73826-4.1) and 4.2V (MCP73826-4.2).
4.1
Charge Qualification and Preconditioning
Upon insertion of a battery or application of an external supply, the MCP73826 verifies the state of the SHDN pin. The SHDN pin must be above the logic high level. If the SHDN pin is above the logic high level, the MCP73826 initiates a charge cycle. If the cell is below the preconditioning threshold, 2.4V typically, the MCP73826 preconditions the cell with a scaled back current. The preconditioning current is set to approximately 43% of the fast charge peak current. The preconditioning safely replenishes deeply depleted cells and minimizes heat dissipation in the external pass transistor during the initial charge cycle.
4.4
Charge Cycle Completion
The charge cycle can be terminated by a host microcontroller after an elapsed time from the start of the charge cycle. The charge is terminated by pulling the shutdown pin, SHDN, to a logic Low level.
4.2
Controlled Current Regulation - Fast Charge
Preconditioning ends and fast charging begins when the cell voltage exceeds the preconditioning threshold. Fast charge utilizes a foldback current scheme based on the voltage at the VSNS input developed by the drop across an external sense resistor, RSENSE, and the output voltage, VBAT. Fast charge continues until the cell voltage reaches the regulation voltage, VREG.
2002 Microchip Technology Inc.
DS21705A-page 9
MCP73826
5.0
5.1
5.1.1
DETAILED DESCRIPTION
Analog Circuitry
OUTPUT VOLTAGE INPUT (VBAT)
5.2
5.2.1
Digital Circuitry
SHUTDOWN INPUT (SHDN)
Refer to the typical application circuit, Figure 6-1.
The shutdown input pin, SHDN, can be used to terminate a charge anytime during the charge cycle, initiate a charge cycle, or initiate a recharge cycle. Applying a logic High input signal to the SHDN pin, or tying it to the input source, enables the device. Applying a logic Low input signal disables the device and terminates a charge cycle. In shutdown mode, the device's supply current is reduced to 0.5 A, typically.
The MCP73826 monitors the cell voltage at the VBAT pin. This input is tied directly to the positive terminal of the battery. The MCP73826 is offered in two fixed-voltage versions for single cells with either coke or graphite anodes: 4.1V (MCP73826-4.1) and 4.2V (MCP73826-4.2). 5.1.2 GATE DRIVE OUTPUT (V DRV)
The MCP73826 controls the gate drive to an external P-channel MOSFET, Q1. The P-channel MOSFET is controlled in the linear region, regulating current and voltage supplied to the cell. The drive output is automatically turned off when the input supply falls below the voltage sensed on the VBAT input. 5.1.3 SUPPLY VOLTAGE (VIN)
The VIN input is the input supply to the MCP73826. The MCP73826 automatically enters a power-down mode if the voltage on the VIN input falls below the voltage on the VBAT pin. This feature prevents draining the battery pack when the VIN supply is not present. 5.1.4 CURRENT SENSE INPUT (VSNS)
Fast charge current regulation is maintained by the voltage drop developed across an external sense resistor, RSENSE, applied to the VSNS input pin. The following formula calculates the value for R SENSE: V CS R SENSE = ----------I O UT Where: VCS is the current limit threshold IOUT is the desired peak fast charge current in amps. The preconditioning current is scaled to approximately 43% of IOUT.
DS21705A-page 10
2002 Microchip Technology Inc.
MCP73826
6.0 APPLICATIONS
The MCP73826 is designed to operate in conjunction with a host microcontroller or in stand-alone applications. The MCP73826 provides the preferred charge
VOLTAGE REGULATED WALL CUBE
algorithm for Lithium-Ion cells, controlled current followed by constant voltage. Figure 6-1 depicts a typical stand-alone application circuit and Figure 6-2 depicts the accompanying charge profile.
MA2Q705 22 k 10 F
RSENSE 100 m
Q1 NDS8434
IOUT
PACK+
10 F
SHDN GND VBAT 100 k
1 2 3 MCP73826
6 5 4
VSNS VIN VDRV
+ -
PACKSINGLE CELL LITHIUM-ION BATTERY PACK
FIGURE 6-1:
Typical Application Circuit.
PRECONDITIONING PHASE REGULATION VOLTAGE (VREG )
CONTROLLED CURRENT PHASE
CONSTANT VOLTAGE PHASE
CHARGE VOLTAGE
REGULATION CURRENT (IOUT(PEAK)) TRANSITION THRESHOLD
PRECONDITION CURRENT CHARGE CURRENT
FIGURE 6-2:
Typical Charge Profile.
2002 Microchip Technology Inc.
DS21705A-page 11
MCP73826
6.1 Application Circuit Design
6.1.1.2 EXTERNAL PASS TRANSISTOR Due to the low efficiency of linear charging, the most important factors are thermal design and cost, which are a direct function of the input voltage, output current and thermal impedance between the external P-channel pass transistor, Q1, and the ambient cooling air. The worst-case situation is when the output is shorted. In this situation, the P-channel pass transistor has to dissipate the maximum power. A trade-off must be made between the charge current, cost and thermal requirements of the charger. 6.1.1 COMPONENT SELECTION PowerDissipation = V INMAX x I OU T x K Where: VINMAX is the maximum input voltage IOUT is the maximum peak fast charge current K is the foldback current scale factor Power dissipation with a 5V, +/-10% input voltage source, 100 m, 1% sense resistor, and a scale factor of 0.43 is: PowerDissipation = 5.5V x 758mA x 0.43 = 1.8W Utilizing a Fairchild NDS8434 or an International Rectifier IRF7404 mounted on a 1in2 pad of 2 oz. copper, the junction temperature rise is 90C, approximately. This would allow for a maximum operating ambient temperature of 60C. By increasing the size of the copper pad, a higher ambient temperature can be realized or a lower value sense resistor could be utilized. Alternatively, different package options can be utilized for more or less power dissipation. Again, design tradeoffs should be considered to minimize size while maintaining the desired performance. Electrical Considerations The gate to source threshold voltage and RDSON of the external P-channel MOSFET must be considered in the design phase. The worst case, VGS provided by the controller occurs when the input voltage is at the minimum and the charge current is at the maximum. The worst case, VGS is: V GS = V DRVMAX - ( V INMIN - I OUT x R SENSE ) Where: VDRVMAX is the maximum sink voltage at the VDRV output The external P-channel MOSFET is determined by the gate to source threshold voltage, input voltage, output voltage, and peak fast charge current. The selected Pchannel MOSFET must satisfy the thermal and electrical design requirements. Thermal Considerations The worst case power dissipation in the external pass transistor occurs when the input voltage is at the maximum and the output is shorted. In this case, the power dissipation is:
Selection of the external components in Figure 6-1 is crucial to the integrity and reliability of the charging system. The following discussion is intended as a guide for the component selection process. 6.1.1.1 SENSE RESISTOR
The preferred fast charge current for Lithium-Ion cells is at the 1C rate with an absolute maximum current at the 2C rate. For example, a 500 mAH battery pack has a preferred fast charge current of 500 mA. Charging at this rate provides the shortest charge cycle times without degradation to the battery pack performance or life. The current sense resistor, RSENSE, is calculated by: V CS R SENSE = ----------I O UT Where: VCS is the current limit threshold voltage IOUT is the desired peak fast charge current For the 500 mAH battery pack example, a standard value 100 m, 1% resistor provides a typical peak fast charge current of 530 mA and a maximum peak fast charge current of 758 mA. Worst case power dissipation in the sense resistor is:
2
PowerDissipation = 100m x 758mA = 57.5mW A Panasonic ERJ-L1WKF100U 100 m, 1%, 1 W resistor is more than sufficient for this application. A larger value sense resistor will decrease the peak fast charge current and power dissipation in both the sense resistor and external pass transistor, but will increase charge cycle times. Design trade-offs must be considered to minimize space while maintaining the desired performance.
DS21705A-page 12
2002 Microchip Technology Inc.
MCP73826
VINMIN is the minimum input voltage source IOUT is the maximum peak fast charge current R SENSE is the sense resistor Worst case, VGS with a 5V, +/-10% input voltage source, 100 m, 1% sense resistor, and a maximum sink voltage of 1.6V is: V GS = 1.6V - ( 4.5V - 758mA x 99m ) = - 2.8 V At this worst case, VGS, the R DSON of the MOSFET must be low enough as to not impede the performance of the charging system. The maximum allowable RDSON at the worst case VGS is: V INMIN - I OU T x R SENSE - V BATMAX R DSON = -----------------------------------------------------------------------------------------I OU T R DSON 4.5V - 758mA x 99m - 4.242V = ------------------------------------------------------------------------------- = 242m 758mA If a reverse protection diode is incorporated in the design, it should be chosen to handle the peak fast charge current continuously at the maximum ambient temperature. In addition, the reverse leakage current of the diode should be kept as small as possible. 6.1.1.5 SHUTDOWN INTERFACE
In the stand-alone configuration, the shutdown pin is generally tied to the input voltage. The MCP73826 will automatically enter a low power mode when the input voltage is less than the output voltage reducing the battery drain current to 8 A, typically. By connecting the shutdown pin as depicted in Figure 6-1, the battery drain current may be further reduced. In this application, the battery drain current becomes a function of the reverse leakage current of the reverse protection diode.
6.2
PCB Layout Issues
The Fairchild NDS8434 and International Rectifier IRF7404 both satisfy these requirements. 6.1.1.3 EXTERNAL CAPACITORS
For optimum voltage regulation, place the battery pack as close as possible to the device's VBAT and GND pins. It is recommended to minimize voltage drops along the high current carrying PCB traces. If the PCB layout is used as a heatsink, adding many vias around the external pass transistor can help conduct more heat to the back-plane of the PCB, thus reducing the maximum junction temperature.
The MCP73826 is stable with or without a battery load. In order to maintain good AC stability in the constant voltage mode, a minimum capacitance of 10 F is recommended to bypass the VBAT pin to GND. This capacitance provides compensation when there is no battery load. In addition, the battery and interconnections appear inductive at high frequencies. These elements are in the control feedback loop during constant voltage mode. Therefore, the bypass capacitance may be necessary to compensate for the inductive nature of the battery pack. Virtually any good quality output filter capacitor can be used, independent of the capacitor's minimum ESR (Effective Series Resistance) value. The actual value of the capacitor and its associated ESR depends on the forward trans conductance, gm, and capacitance of the external pass transistor. A 10 F tantalum or aluminum electrolytic capacitor at the output is usually sufficient to ensure stability for up to a 1 A output current. 6.1.1.4 REVERSE BLOCKING PROTECTION
The optional reverse blocking protection diode depicted in Figure 6-1 provides protection from a faulted or shorted input or from a reversed polarity input source. Without the protection diode, a faulted or shorted input would discharge the battery pack through the body diode of the external pass transistor.
2002 Microchip Technology Inc.
DS21705A-page 13
MCP73826
7.0
7.1
PACKAGING INFORMATION
Package Marking Information
6-Pin SOT-23A (EIAJ SC-74) Device 3 2 1
4
5
6
Part Number
Code
MCP73826-4.1VCH MCP73826-4.2VCH
CN CP
Legend: 1 2 3 4 Note:
Part Number code + temperature range and voltage (two letter code) Part Number code + temperature range and voltage (two letter code) Year and 2-month period code Lot ID number
In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information.
DS21705A-page 14
2002 Microchip Technology Inc.
MCP73826
7.2 Package Dimensions
Component Taping Orientation for 6-Pin SOT-23A (EIAJ SC-74) Devices
User Direction of Feed Device Marking W
PIN 1
P Standard Reel Component Orientation for TR Suffix Device (Mark Right Side Up)
Carrier Tape, Number of Components Per Reel and Reel Size: Package 6-Pin SOT-23A Carrier Width (W) 8 mm Pitch (P) 4 mm Part Per Full Reel 3000 Reel Size 7 in.
.075 (1.90) REF.
.122 (3.10) .098 (2.50) .020 (0.50) .014 (0.35)
.069 (1.75) .059 (1.50)
.037 (0.95) REF. .118 (3.00) .010 (2.80)
.057 (1.45) .035 (0.90) .006 (0.15) .000 (0.00)
10 MAX. .024 (0.60) .004 (0.10)
.008 (0.20) .004 (0.09)
2002 Microchip Technology Inc.
DS21705A-page 15
MCP73826
NOTES:
DS21705A-page 16
2002 Microchip Technology Inc.
MCP73826
ON-LINE SUPPORT
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013001
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2002 Microchip Technology Inc.
DS21705A-page 17
MCP73826
READER RESPONSE
It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip product. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150. Please list the following information, and use this outline to provide us with your comments about this Data Sheet. To: RE: Technical Publications Manager Reader Response Total Pages Sent
From: Name Company Address City / State / ZIP / Country Telephone: (_______) _________ - _________ Application (optional): Would you like a reply? Device: MCP73826 Questions: 1. What are the best features of this document? Y N Literature Number: DS21705A FAX: (______) _________ - _________
2. How does this document meet your hardware and software development needs?
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DS21705A-page 18
2002 Microchip Technology Inc.
MCP73826
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device -X.X Output Voltage X Temperature Range XXXX Package Examples:
a) b)
Device: Output Voltage: MCP73826: Linear Charge Management Controller = 4.1V = 4.2V V = -20C to +85C
MCP73826-4.1VCHTR: Linear Charge Management Controller, 4.1V, Tape and Reel.
MCP73826-4.2VCHTR: Linear Charge Management Controller, 4.2V, Tape and Reel.
Temperature Range: Package:
CHTR = SOT-23, 6-lead (Tape and Reel)
Sales and Support
Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002 Microchip Technology Inc.
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MCP73826
NOTES:
DS21705A-page 20
2002 Microchip Technology Inc.
MCP73826
NOTES:
2002 Microchip Technology Inc.
DS21705A-page21
MCP73826
NOTES:
DS21705A-page 22
2002 Microchip Technology Inc.
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip's products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights.
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2002 Microchip Technology Inc.
DS21705A - page 23
M
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ASIA/PACIFIC
Australia
Microchip Technology Australia Pty Ltd Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Japan
Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Rocky Mountain
2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-7456
China - Beijing
Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104
Korea
Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934
Atlanta
500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770-640-0034 Fax: 770-640-0307
Singapore
Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-334-8870 Fax: 65-334-8850
Boston
2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692-3821
China - Chengdu
Microchip Technology Consulting (Shanghai) Co., Ltd., Chengdu Liaison Office Rm. 2401, 24th Floor, Ming Xing Financial Tower No. 88 TIDU Street Chengdu 610016, China Tel: 86-28-6766200 Fax: 86-28-6766599
Chicago
333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 630-285-0071 Fax: 630-285-0075
Taiwan
Microchip Technology Taiwan 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
Dallas
4570 Westgrove Drive, Suite 160 Addison, TX 75001 Tel: 972-818-7423 Fax: 972-818-2924
China - Fuzhou
Microchip Technology Consulting (Shanghai) Co., Ltd., Fuzhou Liaison Office Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 350001, China Tel: 86-591-7503506 Fax: 86-591-7503521
EUROPE
Denmark
Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910
Detroit
Tri-Atria Office Building 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Tel: 248-538-2250 Fax: 248-538-2260
China - Shanghai
Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
Kokomo
2767 S. Albright Road Kokomo, Indiana 46902 Tel: 765-864-8360 Fax: 765-864-8387
France
Microchip Technology SARL Parc d'Activite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Los Angeles
18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 949-263-1888 Fax: 949-263-1338
China - Shenzhen
Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 1315, 13/F, Shenzhen Kerry Centre, Renminnan Lu Shenzhen 518001, China Tel: 86-755-2350361 Fax: 86-755-2366086
New York
150 Motor Parkway, Suite 202 Hauppauge, NY 11788 Tel: 631-273-5305 Fax: 631-273-5335
Germany
Microchip Technology GmbH Gustav-Heinemann Ring 125 D-81739 Munich, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
San Jose
Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955
Hong Kong
Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431
Italy
Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883
Toronto
6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509
India
Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O'Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062
United Kingdom
Arizona Microchip Technology Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820
01/18/02
*DS21705A*
DS21705A-page 24
2002 Microchip Technology Inc.

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